EUGENE, Ore., Nov. 4 (UPI) -- U.S. nanoscientists say they have synthesized an elusive metal-hydroxide compound that could boost semiconductor capabilities for large-area applications.
University of Oregon researchers said the key to their "bottom-up" production of possibly the first heterometallic gallium-indium hydroxide nanocluster was the substitution of nitroso-butylamine as an additive in place of nitrosobenzene.
The additive acts to optimize and speed crystallization, allowing for reaction yields up to 95 percent, the scientists said. Comparable compounds traditionally made under caustic conditions often take months or even years to crystallize and result in low yields.
"The benefit is that we can predictably control the ratio of gallium and indium in these structures at molecular levels, which can result in the same control in the fabrication of semiconductor thin films," Assistant Professor Darren Johnson said. "We can tailor the properties for specific applications or for different performance levels."
The research that included doctoral student Zachary Mensinger, Professor Douglas Keszler, and researchers Jason Gatlin, Stephen Meyers and Lev Zakharov is to appear in the German journal Angewandte Chemie and is now available online at the journal's Web site.
