Even before Weixiao Huang earned his doctorate from Rensselaer Polytechnic Institute, his invention was seen as possibly replacing one of the most common pieces of technology in the world -- the silicon transistor for high-power and high-temperature electronics.

Rensselaer officials said Huang has invented a transistor that uses a compound material known as gallium nitride that could reduce power consumption and improve efficiency of electronics systems in everything from motor drives and hybrid vehicles to house appliances and defense equipment.

"Silicon has been the workhorse in the semiconductor industry for last two decades," Huang said. "But as power electronics get more sophisticated and require higher performing transistors, engineers have been seeking an alternative like gallium nitride-based transistors that can perform better than silicon and in extreme conditions."

Huang received a bachelor's degree in electronics from Peking University in Beijing in 2001 and a master's degree in physics from Rensselaer in 2003. He will receive his doctorate from Rensselaer during a Saturday ceremony and plans to work as a device engineer in the semiconductor industry.