
CHAMPAIGN, Ill., April 11 (UPI) -- U.S. scientists said Monday they have developed the world's fastest transistor.
Scientists at the University of Illinois at Urbana-Champaign said the transistor structure has broken the 600-gigahertz speed barrier, thereby placing the goal of a terahertz transistor -- capable of making quadrillions of computations per second -- might be within reach.
The new device was built from compounds called indium phosphide and indium gallium arsenide that were designed to reduce data-transit time and improve density. A recent test demonstrated a speed of 604 gigahertz -- the fastest transistor operation to date.
Faster transistors could facilitate faster computers, more flexible and secure wireless communications systems and more effective electronic combat systems, the scientists said.
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